PART |
Description |
Maker |
V826664G24S |
512 MB 200-PIN DDR UNBUFFERED SODIMM 2.5 VOLT 64M x 64
|
Mosel Vitelic Corp Mosel Vitelic, Corp. Mosel Vitelic Corp MOSEL[Mosel Vitelic, Corp] http://
|
V826632B24S |
256 MB 200-PIN DDR UNBUFFERED SODIMM 2.5 VOLT 32M x 64
|
MOSEL[Mosel Vitelic, Corp] Mosel Vitelic Corp
|
HYS72D32300GBR-6-C HYS72D64320GBR-6-C HYS72D128320 |
DDR SDRAM Modules - 512 MB (64Mx72) PC3200 2-bank; Available 3Q04 DDR SDRAM Modules - 512 MB (64Mx72) PC3200 1-bank; Available 3Q04 DDR SDRAM Modules - 256MB (32Mx72) PC3200 1-bank, FBGA based; Available 3Q04 DDR SDRAM Modules - 512 MB (64Mx72) PC2700 2-bank; Available 2Q04 DDR SDRAM Modules - 512 MB (64Mx72) PC2700 1-bank; Available 2Q04 DDR SDRAM Modules - 256 MB (32Mx72) PC2700 1-bank; Available 2Q04 DDR SDRAM Modules - 1 GB (128Mx72) PC2700 2-bank; Available 2Q04 184-Pin Registered Double Data Rate SDRAM Module
|
INFINEON[Infineon Technologies AG]
|
HYMD564646L8 HYMD5646468 HYMD564646XXX HYMD5646468 |
Unbuffered DDR SDRAM DIMM 64Mx64|2.5V|K/H/L|x8|DDR SDRAM - Unbuffered DIMM 512MB 64M X 64 DDR DRAM MODULE, 0.75 ns, DMA184
|
Hynix Semiconductor HYNIX SEMICONDUCTOR INC
|
NT256D64S88B1G NT512D64S8HB0G NT512D64S8HB0G-75B N |
184 pin Unbuffered DDR DIMM
|
ETC[ETC]
|
NT512D72S8PB0G |
184 pin Unbuffered DDR DIMM
|
ETC
|
HYS64D128320HU-5-C HYS72D128320HU-5-C HYS64D64300H |
184-Pin Unbuffered Double Data Rate SDRAM 128M X 64 DDR DRAM MODULE, 0.5 ns, DMA184 184-Pin Unbuffered Double Data Rate SDRAM 64M X 64 DDR DRAM MODULE, 0.5 ns, DMA184
|
Qimonda AG
|
M470T2953BS0-CD5_CC M470T6554BG0-CD5_CC M470T6554B |
40 Characters x 4 Lines, 5x7 Dot Matrix Character and Cursor 200pin缓冲的SODIMM基于512Mb乙芯4位非ECC 200pin Unbuffered SODIMM based on 512Mb B-die 64bit Non-ECC 200pin缓冲的SODIMM基于512Mb乙芯64位非ECC 64M X 64 DDR DRAM MODULE, 0.5 ns, ZMA200 ROHS COMPLIANT, SODIMM-200 32M X 64 DDR DRAM MODULE, 0.5 ns, ZMA200 ROHS COMPLIANT, SODIMM-200 200pin Unbuffered SODIMM based on 512Mb B-die 64bit Non-ECC 200pin缓冲的SODIMM基于512Mb乙芯4位非ECC 128M X 64 DDR DRAM MODULE, 0.5 ns, ZMA200 ROHS COMPLIANT, SODIMM-200 Triac; Thyristor Type:Snubberless; Peak Repetitive Off-State Voltage, Vdrm:400V; On State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:35mA; Current, It av:6A; Gate Trigger Current Max, Igt:35mA RoHS Compliant: Yes
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Electronic
|
M470T3354CZ0-E6 M470T2953CZ0-E6 M470T6554CZ0-E6 M4 |
32M X 64 DDR DRAM MODULE, 0.45 ns, ZMA200 ROHS COMPLIANT, SODIMM-200 DDR2 Unbuffered SODIMM 无缓冲DDR2内存的SODIMM 64M X 64 DDR DRAM MODULE, 0.45 ns, ZMA200 ROHS COMPLIANT, SODIMM-200 128M X 64 DDR DRAM MODULE, 0.45 ns, ZMA200
|
SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
|
HYMD264646B8-H HYMD264646B8-K HYMD264646B8-L HYMD2 |
Unbuffered DDR SDRAM DIMM 64Mx64|2.5V|M/K/H/L|x16|DDR SDRAM - Unbuffered DIMM 512MB
|
Hynix Semiconductor
|
HYMD216M726AL6-K HYMD216M726AL6-H HYMD216M726AL6-J |
Unbuffered DDR SO-DIMM 16M X 72 DDR DRAM MODULE, 0.7 ns, DMA200
|
HYNIX SEMICONDUCTOR INC
|
HB54A2568FM-A75B HB54A2569FM-A75B HB54A2569FM-10B |
32M X 64 DDR DRAM MODULE, 0.75 ns, DMA184 256MB Unbuffered DDR SDRAM DIMM
|
ELPIDA MEMORY INC
|